Oxidized Silicon-On-Insulator (OxSOI) from bulk silicon: a new photonic platform

We demonstrate a bulk silicon alternative to SOI, using Si3N4 masking and oxidation techniques. We show waveguide losses of 2.92 dB/cm with a process compatible with the front-end of a typical CMOS fabrication line.

[1]  Hiroshi Morita,et al.  Thermal Oxidation Rate of a Si3N4Film and Its Masking Effect against Oxidation of Silicon , 1978 .

[2]  M. Lipson,et al.  Nanotaper for compact mode conversion. , 2003, Optics letters.

[3]  R. Koh Buried Layer Engineering to Reduce the Drain-Induced Barrier Lowering of Sub-0.05 µm SOI-MOSFET , 1999 .

[4]  Proceedings of the IEEE , 2018, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[5]  T L Koch,et al.  Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation. , 2009, Applied optics.

[6]  P. Dumon,et al.  Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology , 2005, Journal of Lightwave Technology.

[7]  Rajeev J Ram,et al.  Localized substrate removal technique enabling strong-confinement microphotonics in bulk Si CMOS processes , 2008, 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science.

[8]  Raymond G. Beausoleil,et al.  Nanoelectronic and Nanophotonic Interconnect , 2008, Proceedings of the IEEE.

[9]  Stephane Monfray,et al.  Requirements for ultra-thin-film devices and new materials for the CMOS roadmap , 2004 .

[10]  Goran Z. Mashanovich,et al.  Sub-micron optical waveguides for silicon photonics formed via the local oxidation of silicon (LOCOS) , 2008, SPIE OPTO.

[11]  Luca P. Carloni,et al.  On the Design of a Photonic Network-on-Chip , 2007, First International Symposium on Networks-on-Chip (NOCS'07).