论文信息 - Improvement in quantum efficiency of thin film Si solar cells due to the suppression of optical reflectance at transparent conducting oxide/Si interface by TiO2∕ZnO antireflection coating

Improvement in quantum efficiency of thin film Si solar cells due to the suppression of optical reflectance at transparent conducting oxide/Si interface by TiO2∕ZnO antireflection coating

Through experiments and optical simulations the suppression of optical reflection at the transparent conducting oxide/Si interface of thin film Si p-i-n solar cells is shown by application of a TiO2 antireflection (AR) coating. In addition, a deterioration in the transmittance of TiO2 is shown to be due to its reduction by a H2 plasma, which in turn deteriorates the quantum efficiency (QE) at long wavelength. Such a reduction is completely prevented by a ZnO overcoat of ∼10nm. Applying the TiO2∕ZnO AR coating realizes an improvement in QE at all wavelengths with an increase of up to ∼10% at 550nm.

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