论文信息 - SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate - 字舞流文

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

L. Calcagno | G. Condorelli | G. Foti | F. Portuese | F. La Via | S. di Franco | G. Abbondanza | L. Perdicaro | G. Galvagno | M. Mauceri | D. Crippa | G. Valente | G. Izzo | G. Pistone