Optical effects of ion implantation

Publisher Summary A refractive index can be increased by ion implantation by changes in density and structure, by the addition of high-polarizability impurity ions, by a reduction of the plasma effect that increases the index and that is most important in the wavelength region far from the energy gap, and by absorption changing in the index in the region of the gap, that is, via the Kramers–Kronig relation. This chapter discusses the optical properties of implanted semiconductors, electrooptic components formed by ion implantation, general principles that determine most luminescent systems, effects of implantation temperature, luminescence centers in LiF-Mg-Ti radiation dosimeters, and use of line spectra in defect studies. In the LiF system, the luminescence bands are broad, and if alternative versions of the same complex exist, they cannot be resolved from the spectra. The addition, by implantation, of ions with incomplete inner electron shells opens up new possibilities as the lattice distortions of the free-ion energy levels are strongly perturbed by the defects in the neighborhood of the ion.

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