Application-based review of GaN HFETs

Normally-off GaN-on-Si heterojunction field-effect transistors (HFETs) have been developed with up to 650 V blocking capability, fast switching, and low conduction losses in commercial devices. The natively depletion-mode device can be modified to be normally-off using a variety of techniques. For a power electronics engineer accustomed to Si-based converter design, there is inherent benefit to understanding the unique characteristics and challenges that distinguish GaN HFETs from Si MOSFETs. Dynamic Rds-on self-commutated reverse conduction, gate voltage and current requirements, and the effects of very fast switching are explained from an applications perspective. This paper reviews available literature on commercial and near-commercial GaN HFETs, to prepare engineers with Si-based power electronics experience to effectively design GaN-based converters.

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