Compact Model for Multiple-Gate SOI MOSFETs

In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., transistors with small shortchannel effects. We have considered different transport models (drift-diffusion and quasi-ballistic models); each one is valid for a certain range of channel lengths. The models are valid for all the operation regions (linear, saturation, subthreshold) and trace the transition between them without fitting-parameters. The characteristics obtained by this model agree with two- and threedimensional numerical simulations for all ranges of gate and drain voltages.