Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

[1]  X. T. Zhang,et al.  Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance , 2011, IEEE Electron Device Letters.

[2]  Hyunsang Hwang,et al.  Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing , 2013, IEEE Transactions on Electron Devices.

[3]  Wei Hu,et al.  Opportunity of spinel ferrite materials in nonvolatile memory device applications based on their resistive switching performances. , 2012, Journal of the American Chemical Society.

[4]  A. Tanaka,et al.  Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors , 2013 .

[5]  J. Cho,et al.  Bistable resistance memory switching effect in amorphous InGaZnO thin films , 2010 .

[6]  Ming-Jinn Tsai,et al.  Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films , 2010 .

[7]  Shimeng Yu,et al.  HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. , 2013, ACS nano.

[8]  B. Park,et al.  Switchable Schottky diode characteristics induced by electroforming process in Mn-doped ZnO thin films , 2013 .

[9]  S. Chu,et al.  High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing , 2013 .

[10]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[11]  Xinman Chen,et al.  Resistive switching behavior of Pt/Mg0.2Zn0.8O/Pt devices for nonvolatile memory applications , 2008 .

[12]  Spatially extended nature of resistive switching in perovskite oxide thin films , 2006, cond-mat/0601451.

[13]  Y. Liu,et al.  Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor , 2012 .

[14]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[15]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[16]  Y. Chueh,et al.  Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate. , 2013, ACS applied materials & interfaces.

[17]  Po-Tsun Liu,et al.  Multilevel resistive switching memory with amorphous InGaZnO-based thin film , 2013 .

[18]  J. Robertson,et al.  Interpretation of Raman spectra of disordered and amorphous carbon , 2000 .

[19]  Wei Hu,et al.  Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices , 2012 .

[20]  Shin-Ping Huang,et al.  Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors , 2010 .

[21]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[22]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[23]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[24]  Xinman Chen,et al.  Colossal resistance switching effect in Pt/spinel-MgZnO/Pt devices for nonvolatile memory applications , 2009 .

[25]  Yong-Young Noh,et al.  Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films , 2012, Nature.

[26]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[27]  Lih-Juann Chen,et al.  Dynamic evolution of conducting nanofilament in resistive switching memories. , 2013, Nano letters.