Electrical charge state identification and control for the silicon vacancy in 4H-SiC
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J. Coutinho | A. Galeckas | U. Grossner | M. E. Bathen | J. Müting | H. M. Ayedh | Y. Frodason | L. Vines | J. Coutinho | Lasse Vines | U. Grossner | A. Galeckas
[1] J. Stark,et al. Beobachtungen ber den Effekt des elektrischen Feldes auf Spektrallinien. I. Quereffekt , 1914 .
[2] A. Stoneham. Theory of defects in solids , 1979 .
[3] A. Stoneham. Theory of Defects in Solids: Electronic Structure of Defects in Insulators and Semiconductors , 1976 .
[4] E. Bringuier. Impact excitation in ZnS‐type electroluminescence , 1991 .
[5] G. Kresse,et al. Ab initio molecular dynamics for liquid metals. , 1993 .
[6] Hafner,et al. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. , 1994, Physical review. B, Condensed matter.
[7] Blöchl,et al. Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.
[8] G. Kresse,et al. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set , 1996 .
[9] Kresse,et al. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.
[10] E. Janzén,et al. Electronic structure of the neutral silicon vacancy in 4H and 6H SiC , 2000 .
[11] T. Frauenheim,et al. Metastability of the Neutral Silicon Vacancy in 4H-SiC , 2000 .
[12] E. Knill,et al. A scheme for efficient quantum computation with linear optics , 2001, Nature.
[13] A. Hallén,et al. Annealing study of a bistable defect in proton-implanted n-type 4H-SiC , 2003 .
[14] G. Scuseria,et al. Hybrid functionals based on a screened Coulomb potential , 2003 .
[15] A. Hallén,et al. Electrically active defects in irradiated 4H-SiC , 2004 .
[16] A. Henry,et al. Deep levels created by low energy electron irradiation in 4H-SiC , 2004 .
[17] B. Svensson,et al. Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide , 2005 .
[18] A. Hallén,et al. Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide , 2005 .
[19] P Hemmer,et al. Stark shift control of single optical centers in diamond. , 2006, Physical Review Letters.
[20] A. Galeckas,et al. Fundamental band edge absorption in nominally undoped and doped 4H‐SiC , 2007 .
[21] J. Ziegler,et al. SRIM – The stopping and range of ions in matter (2010) , 2010 .
[22] C. Freysoldt,et al. Fully ab initio finite-size corrections for charged-defect supercell calculations. , 2009, Physical review letters.
[23] E. Janzén,et al. The Silicon Vacancy in SiC , 2009 .
[24] L. Jiang,et al. Quantum entanglement between an optical photon and a solid-state spin qubit , 2010, Nature.
[25] D. D. Awschalom,et al. Quantum computing with defects , 2010, Proceedings of the National Academy of Sciences.
[26] Bob B. Buckley,et al. Room temperature coherent control of defect spin qubits in silicon carbide , 2011, Nature.
[27] Á. Gali,et al. Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional , 2011, 1105.3079.
[28] Alfredo Pasquarello,et al. Finite-size supercell correction schemes for charged defect calculations , 2012 .
[29] E Janzén,et al. Negative-U system of carbon vacancy in 4H-SiC. , 2012, Physical review letters.
[30] T. Umeda,et al. A room temperature single photon source in silicon carbide , 2013, CLEO: 2013.
[31] Neil B. Manson,et al. The nitrogen-vacancy colour centre in diamond , 2013, 1302.3288.
[32] G. Kresse,et al. First-principles calculations for point defects in solids , 2014 .
[33] M. Curty,et al. Secure quantum key distribution , 2014, Nature Photonics.
[34] F. Oba,et al. Electrostatics-based finite-size corrections for first-principles point defect calculations , 2014, 1402.1226.
[35] G. Astakhov,et al. Room-temperature quantum microwave emitters based on spin defects in silicon carbide , 2013, Nature Physics.
[36] N. Iwamoto,et al. Point Defects in Silicon Carbide , 2015 .
[37] Nan Zhao,et al. Coherent control of single spins in silicon carbide at room temperature. , 2014, Nature Materials.
[38] Takeshi Ohshima,et al. Isolated electron spins in silicon carbide with millisecond coherence times. , 2014, Nature materials.
[39] Juan Miguel Arrazola,et al. Experimental quantum fingerprinting with weak coherent pulses , 2015, Nature Communications.
[40] N. T. Son,et al. Vector Magnetometry Using Silicon Vacancies in 4 H -SiC Under Ambient Conditions , 2016, 1606.01301.
[41] W. E. Meyer,et al. Electrical characterization of deep levels created by bombarding nitrogen-doped 4H-SiC with alpha-particle irradiation , 2016 .
[42] T. Ohshima,et al. Locking of electron spin coherence above 20 ms in natural silicon carbide , 2016, 1602.05775.
[43] Cristian Bonato,et al. Quantum properties of dichroic silicon vacancies in silicon carbide , 2017, 1707.02715.
[44] David O. Bracher,et al. Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center , 2016, Proceedings of the National Academy of Sciences.
[45] Stark Tuning and Electrical Charge State Control of Single Divacancies in Silicon Carbide , 2017, 1710.10705.
[46] N. T. Son,et al. Identification of Si-vacancy related room-temperature qubits in 4 H silicon carbide , 2017, 1708.06259.
[47] E. Janzén,et al. Scalable quantum photonics with single color centers in silicon carbide , 2016, 2017 Conference on Lasers and Electro-Optics (CLEO).
[48] D. Golter,et al. Optical switching of defect charge states in 4H-SiC , 2017, Scientific Reports.
[49] Guanzhong Wang,et al. Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide , 2016, 1610.03978.
[50] F. J. Heremans,et al. Optical charge state control of spin defects in 4H-SiC , 2017, Nature Communications.
[51] B. Johnson,et al. A review on single photon sources in silicon carbide , 2017, Reports on progress in physics. Physical Society.
[52] T. Ohshima,et al. Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study , 2018 .
[53] T. Ohshima,et al. Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface , 2018 .
[54] D. Awschalom,et al. Electrometry by optical charge conversion of deep defects in 4H-SiC , 2018, Proceedings of the National Academy of Sciences.
[55] E. Janzén,et al. Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС , 2018, Materials Science Forum.
[56] N. T. Son,et al. Identification and tunable optical coherent control of transition-metal spins in silicon carbide , 2018, npj Quantum Information.
[57] Peter C. Humphreys,et al. Deterministic delivery of remote entanglement on a quantum network , 2017, Nature.
[58] B. Monserrat,et al. Defect identification based on first-principles calculations for deep level transient spectroscopy , 2018, Applied Physics Letters.
[59] N. T. Son,et al. High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide , 2018, Nature Communications.
[60] Y. Frodason,et al. Negative-Uand polaronic behavior of the Zn-O divacancy in ZnO , 2019, Physical Review B.
[61] N. T. Son,et al. Electrical and optical control of single spins integrated in scalable semiconductor devices , 2019, Science.
[62] N. T. Son,et al. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions , 2019, Nature Communications.
[63] N. T. Son,et al. Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device. , 2019, Nano letters.