Design and Electrical Characterization of Wafer-level Micro-package for GaAs-based RFMEMS Switches
暂无分享,去创建一个
Shiban K. Koul | Sandeep Chaturvedi | Sangam Bhalke | S. L. Badnikar | R. Muralidharan | G. Sai Saravanan | Mahadeva K. Bhat
[1] Chengkuo Lee,et al. Characterization of intermediate In/Ag layers of low temperature fluxless solder based wafer bonding for MEMS packaging , 2009 .
[2] L. Wang,et al. Influence of bonding parameters on electrostatic force in anodic wafer bonding , 2004 .
[4] Yong Kook Kim,et al. Low temperature epoxy bonding for wafer level MEMS packaging , 2008 .
[5] Liwei Lin,et al. Hermetic wafer bonding based on rapid thermal processing , 2001 .
[6] William D. Brown,et al. Selective bonding and encapsulation for wafer-level vacuum packaging of MEMS and related micro systems , 2004, Microelectron. Reliab..
[7] G. Q. Zhang,et al. Failure analysis of a thin-film nitride MEMS package , 2008, Microelectron. Reliab..
[10] M. Iyer,et al. Design and electrical characterization of a novel wafer level package for RF MEMS applications , 2003, 53rd Electronic Components and Technology Conference, 2003. Proceedings..
[12] Anthony J Lord. Comparing the Accuracy and Repeatability of On-Wafer Calibration Techniques to 110GHz , 1999, 1999 29th European Microwave Conference.
[13] R. Gaddi,et al. RF–MEMS wafer-level packaging using through-wafer interconnect , 2008 .
[14] N. Rolland,et al. A novel packaging method using wafer-level BCB polymer bonding and glass wet-etching for RF applications , 2008 .
[15] Jean-Yves Delétage,et al. Moisture diffusion in BCB resins used for MEMS packaging , 2003, Microelectron. Reliab..