Monte Carlo simulation of electron transport in alternating-current thin-film electroluminescent devices
暂无分享,去创建一个
Stephen M. Goodnick | Keya Bhattacharyya | John F. Wager | S. Goodnick | J. Wager | K. Bhattacharyya
[1] C. Erginsoy. Neutral Impurity Scattering in Semiconductors , 1950 .
[2] R. Mach,et al. Vacuum emission of hot electrons from ZnS , 1990 .
[3] X. Xurong,et al. Anisotropy of the cross-section of impact excitation in electroluminescence , 1989 .
[4] B. Nag. Theory of electrical transport in semiconductors , 1972 .
[5] B. Ridley. Lucky-drift mechanism for impact ionisation in semiconductors , 1983 .
[6] B. Nag,et al. Electron transport in compound semiconductors , 1980 .
[7] E. Bringuier. Impact excitation in ZnS‐type electroluminescence , 1991 .
[8] P. Lugli,et al. The Monte Carlo Method for Semiconductor Device Simulation , 1990 .
[9] C. M. Wolfe,et al. Physical Properties of Semiconductors , 1989 .
[10] N. Sclar. Neutral Impurity Scattering in Semiconductors , 1956 .
[11] W. Spear,et al. Transient acoustoelectric interaction in CdS and ZnS crystals , 1966 .
[12] W. Spear,et al. Transient Acoustoelectric Saturation Effects in ZnS and CdS Crystals , 1964 .
[13] R. Mach,et al. Ballistic transport and electroluminescence in IIB–VI and IIA–VI compounds , 1990 .
[14] K. Brennan. Theory of high-field electronic transport in bulk ZnS and ZnSe , 1988 .