Unpinned (100) GaAs surfaces in air using photochemistry
暂无分享,去创建一个
Peter D. Kirchner | Jerry M. Woodall | Terry I. Chappell | George David Pettit | S. D. Offsey | A. C. Warren | T. Chappell | J. Woodall | P. Kirchner | S. Offsey | G. Pettit
[1] H. Wieder. Problems and prospects of compound semiconductor field‐effect transistors , 1980 .
[2] H. H. Wieder,et al. Perspectives on III–V compound MIS structures , 1978 .
[3] Jean Massies,et al. Substrate chemical etching prior to molecular‐beam epitaxy: An x‐ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4‐H2O2‐H2O solution , 1985 .
[4] L. Meiners. Electrical properties of the gallium arsenide–insulator interface , 1978 .
[5] G. E. Smith,et al. MOS field-effect transistors and integrated circuits , 1973 .
[6] H. Hasegawa,et al. Dynamic properties of interface‐state bands in GaAs anodic MOS system , 1979 .
[7] H. Hovel,et al. Photoluminescent properties of GaAs–GaAlAs, GaAs–oxide, and GaAs–ZnS heterojunctions , 1979 .
[8] H. Leamy,et al. Charge collection scanning electron microscopy , 1982 .
[9] J. Massies,et al. X‐ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs , 1985 .
[10] J. Woodall,et al. GaAs metallization: Some problems and trends , 1981 .
[11] I. Teramoto,et al. Thermal-oxide gate GaAs MOSFET's , 1978, IEEE Transactions on Electron Devices.
[12] I. Lindau,et al. Unified defect model and beyond , 1980 .
[13] Hideki Hasegawa,et al. Interface state band between GaAs and its anodic native oxide , 1979 .
[14] C. Dimitriadis,et al. A SEM-EBIC minority-carrier diffusion-length measurement technique , 1982, IEEE Transactions on Electron Devices.
[15] D. Lile,et al. Depletion‐mode GaAs MOS FET , 1976 .
[16] L. Messick,et al. Electrical properties of anodic and pyrolytic dielectrics on gallium arsenide , 1977 .