Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor

We demonstrated an ultrathin (~10 nm) ifndium nitride (InN) ion-sensitive field-effect transistor (ISFET) for pH sensing. The native indium oxide formed on the InN surface functions as a chemical binding layer with a high pH sensitivity, while the strong surface electron accumulation of InN along with the ultrathin conduction channel results in a large ion-induced surface potential to current transconductance. The ultrathin InN ISFETs were characterized to show a gate sensitivity of 58.3 mV/pH in the pH range of 2-12, a current variation ratio of 4.0%/pH, a resolution of less than 0.03 pH, and a response time of less than 10 s.

[1]  P Bergveld,et al.  Development of an ion-sensitive solid-state device for neurophysiological measurements. , 1970, IEEE transactions on bio-medical engineering.

[2]  D. E. Yates,et al.  Site-binding model of the electrical double layer at the oxide/water interface , 1974 .

[3]  Guan-Ting Chen,et al.  AlGaN/GaN HEMT based liquid sensors , 2004 .

[4]  P. Bergveld,et al.  Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface , 1983, IEEE Transactions on Electron Devices.

[5]  Chung-Lin Wu,et al.  Organosilane functionalization of InN surface , 2006 .

[6]  M. Esashi,et al.  WP-B4 pH ISFET's using Al 2 O 3 , Si 3 N 4 , and SiO 2 gate thin films , 1979 .

[7]  H. Hasegawa,et al.  Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure , 2006 .

[8]  T. Pan,et al.  Development of a High-k Pr $_{2}$ O $_{3}$ Sensing Membrane for pH-ISFET Application , 2008 .

[9]  W. Schaff,et al.  Clean wurtzite InN surfaces prepared with atomic hydrogen , 2005 .

[10]  Lester F. Eastman,et al.  Surface charge accumulation of InN films grown by molecular-beam epitaxy , 2003 .

[11]  Xuema Li,et al.  Sequence-Specific Label-Free DNA Sensors Based on Silicon Nanowires , 2004 .

[12]  James R Heath,et al.  Quantitative real-time measurements of DNA hybridization with alkylated nonoxidized silicon nanowires in electrolyte solution. , 2006, Journal of the American Chemical Society.

[13]  Joan M. Redwing,et al.  X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN , 2003 .

[14]  N. Chaniotakis,et al.  Novel semiconductor materials for the development of chemical sensors and biosensors: a review. , 2008, Analytica chimica acta.

[15]  J. Andrew Yeh,et al.  Anion detection using ultrathin InN ion selective field effect transistors , 2008 .

[16]  Chun-Sing Lee,et al.  Silicon nanowires as chemical sensors , 2003 .

[17]  Lester F. Eastman,et al.  pH response of GaN surfaces and its application for pH-sensitive field-effect transistors , 2003 .

[18]  Investigation on -c-InN and a-InN:Mg field effect transistors under electrolyte gate bias , 2009 .

[19]  Chung-Lin Wu,et al.  Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature , 2004 .

[20]  Friedhelm Bechstedt,et al.  Origin of electron accumulation at wurtzite InN surfaces , 2004 .

[21]  W. Ko,et al.  A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor , 1986, IEEE Transactions on Electron Devices.

[22]  B. S. Kang,et al.  AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing , 2005, IEEE Sensors Journal.

[23]  Lester F. Eastman,et al.  Surface chemical modification of InN for sensor applications , 2004 .

[24]  C. Lieber,et al.  Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species , 2001, Science.

[25]  N. Chaniotakis,et al.  Response to anions of AlGaN∕GaN high-electron-mobility transistors , 2005 .

[26]  R. Cobbold,et al.  Basic properties of the electrolyte—SiO2—Si system: Physical and theoretical aspects , 1979, IEEE Transactions on Electron Devices.