Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W − 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene.We report the design, growth, processing, and characterization of resonant cavity enhanced photodiodes for the midwave infrared at ∼3.72 μm on GaSb. Using AlAsSb/GaSb mirrors, AlAsSb barrier and spacer layers and a thin 96 nm InAsSb absorber, we observed dark current and detectivity behavior superior to common InAsSb nBn detectors in the literature, with peak specific detectivity values of 8 × 10 10 and 1 × 10 10 cm Hz 1 / 2 W − 1 measured at 250 K and 300 K, respectively. In the same temperature range, the linewidth of the detector response was 60% where the enhancement due to the resonant cavity was ∼20x. We estimate that the devices can operate close to, or slightly above, the background-limited infrared performance limit imposed on broadband detectors for a 300 K scene.

[1]  H. Morkoç,et al.  Resonant‐cavity GaAs/InGaAs/AlAs photodiodes with a periodic absorber structure , 1993 .

[2]  J. Campbell,et al.  High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode , 1991 .

[3]  H. S. Kim,et al.  nBn structure based on InAs /GaSb type-II strained layer superlattices , 2007 .

[4]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[5]  S. Krishna,et al.  Electron barrier study of mid-wave infrared interband cascade photodetectors , 2013 .

[6]  Keith Jamison,et al.  Mid-IR resonant cavity detectors , 2017 .

[7]  J. Muszalski,et al.  Resonant cavity enhanced photonic devices , 1995 .

[8]  Juejun Hu,et al.  Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform. , 2010, Optics express.

[9]  J. Chyi,et al.  Resonant cavity-enhanced (RCE) photodetectors , 1991 .

[10]  P. Rez,et al.  Calculated infrared spectra of nerve agents and simulants. , 2012, Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy.

[11]  G. Wicks,et al.  nBn detector, an infrared detector with reduced dark current and higher operating temperature , 2006 .

[12]  Alexander Soibel,et al.  Room temperature performance of mid-wavelength infrared InAsSb nBn detectors , 2014 .

[13]  S. I. Woods,et al.  Emissivity of silver and stainless steel from 80 K to 300 K: Application to ITER thermal shields , 2014 .

[14]  Chris C. Phillips,et al.  3 m InAs resonant-cavity-enhanced photodetector , 2003 .

[15]  P. J. Batty,et al.  The development of room temperature LEDs and lasers for the mid‐infrared spectral range , 2008 .

[16]  Sir B. Rafol,et al.  1024 × 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications , 2005 .

[17]  Piotr Martyniuk,et al.  Antimonide-based Infrared Detectors: A New Perspective , 2018 .