论文信息 - Laser simulation of single-particle effects

Laser simulation of single-particle effects

The authors examine laser simulation of single-particle effects in some detail, investigating the effects of doping density and charge collection depth on funneling and charge collection, and accounting for the spreading of the focused laser beam within the silicon material. Calculations using the device simulation code PISCES are compared for heavy ions and lasers to investigate the accuracy of laser simulation of single-particle effects. Experimental charge collection measurements with heavy ions are used to establish the accuracy of the PISCES simulations. >

[1] A. B. Campbell,et al. Charge Collection in Multilayer Structures , 1984, IEEE Transactions on Nuclear Science.

[2] T. R. Oldham,et al. Revised Funnel Calculations for Heavy Particles with High dE/dx , 1986, IEEE Transactions on Nuclear Science.

[3] W. D. Raburn,et al. Laser Simulation of Single Event Upsets , 1987, IEEE Transactions on Nuclear Science.

[4] A. B. Campbell,et al. Charge collection from focussed picosecond laser pulses , 1988 .

[5] I. Arimura,et al. Simulation of Heavy Charged Particle Tracks Using Focused Laser Beams , 1987, IEEE Transactions on Nuclear Science.

[6] T. R. Oldham,et al. Charge Funneling in N- and P-Type Si Substrates , 1982, IEEE Transactions on Nuclear Science.

[7] A. B. Campbell,et al. Comparison of experimental charge collection waveforms with PISCES calculations , 1991 .

[8] A. B. Campbell,et al. Charge Transport by the Ion Shunt Effect , 1986, IEEE Transactions on Nuclear Science.

[9] A. B. Campbell,et al. Alpha-, boron-, silicon- and iron-ion-induced current transients in low-capacitance silicon and GaAs diodes , 1988 .