A New Statistical Model for SILC Distribution of Flash Memory and the Effect of Spatial Trap Distribution

A new statistical model accurately reproducing the result of the Monte-Carlo (MC) simulation is proposed for the analysis of the SILC distribution of flash memory. From the pre-calculated probability density distributions (PDD) of the current through one multi-trap (1-trap and 2-trap) path, the current PDD of the cell is obtained using the convolution theorem and compared with the result of MC simulation. Current PDD of the cell is found to be very sensitive to the spatial distribution of traps

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