Time dependence of the Hanle effect in the emission of triplet bound excitons in gallium selenide

[1]  Yu. G. Kusrayev,et al.  Spin depolarization of holes and lineshape of the Hanle effect in semiconductor nanostructures , 2009 .

[2]  Y. Masumoto,et al.  Spin dephasing of doped electrons in charge-tunable InP quantum dots: Hanle-effect measurements , 2006 .

[3]  E. L. Ivchenko,et al.  Dynamics of the magnetic-field-induced polarization of exciton luminescence in GaSe crystals , 2005 .

[4]  A. Starukhin,et al.  Time-resolved spectroscopy of the level-anticrossing effect in exciton emission , 2002 .

[5]  I. Buyanova,et al.  Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN , 2000 .

[6]  E. L. Ivchenko,et al.  Superlattices and Other Heterostructures: Symmetry and Optical Phenomena , 1995 .

[7]  Chen,et al.  Optically detected magnetic-resonance study of a metastable selenium-related center in silicon. , 1995, Physical review. B, Condensed matter.

[8]  Chen,et al.  Zero-field optical detection of magnetic resonance on a metastable sulfur-pair-related defect in silicon: Evidence for a Cu constituent. , 1992, Physical review. B, Condensed matter.

[9]  Chen,et al.  Steady-state level-anticrossing spectra for bound-exciton triplets associated with complex defects in semiconductors. , 1990, Physical review. B, Condensed matter.

[10]  Chen,et al.  Gai self-interstitial-related defect in GaP studied by optically detected magnetic resonance. , 1989, Physical review. B, Condensed matter.

[11]  Chen,et al.  Two deep (PGa-Cu)-related neutral complex defects in GaP studied with optically detected magnetic resonance. , 1988, Physical review. B, Condensed matter.

[12]  R. Planel.  Spin orientation by optical pumping in semiconductors , 1978 .

[13]  M. Schlüter,et al.  The band-gap excitons in gallium selenide , 1973 .

[14]  V. I. Perel’,et al.  Interference of atomic states , 1993 .