论文信息 - Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunch-through buffer layer is found to be the major factor determining switching loss.

J. Cooper | Y. Sui | T. Tamaki | G. Walden

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