Analysis of the Double Laser Emission Occurring in 1.55-$\mu{\hbox {m}}$ InAs–InP (113)B Quantum-Dot Lasers
暂无分享,去创建一个
F. Grillot | S. Loualiche | J. Even | K. Veselinov | C. Cornet | A. Bekiarski | F. Grillot | J. Even | S. Loualiche | M. Gioannini | K. Veselinov | C. Cornet | M. Gioannini | A. Bekiarski
[1] T. W. Berg,et al. Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices , 2001, IEEE Photonics Technology Letters.
[2] D. Bimberg,et al. High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers , 2004, IEEE Photonics Technology Letters.
[3] O. Dehaese,et al. Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission , 2002 .
[4] Y. Tanguy,et al. Electron-hole asymmetry and two-state lasing in quantum dot lasers , 2005, EQEC '05. European Quantum Electronics Conference, 2005..
[5] Philippe Caroff,et al. High-gain and low-threshold InAs quantum-dot lasers on InP , 2005 .
[6] Albrecht,et al. Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots. , 1996, Physical review. B, Condensed matter.
[7] Andrea Fiore,et al. Impact of intraband relaxation on the performance of a quantum-dot laser , 2003 .
[8] Hiroshi Ishikawa,et al. Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasers , 2000 .
[9] O. Dehaese,et al. Time-resolved pump probe of 1.55 μm InAs/InP quantum dots under high resonant excitation , 2006 .
[10] Hiroshi Ishikawa,et al. Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1-x As/GaAs quantum dot lasers , 2000 .
[11] Guillaume Huyet,et al. Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers , 2003 .
[12] A. Ramdane,et al. Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers , 2006 .
[13] N. Yokoyama,et al. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA , 1999, IEEE Photonics Technology Letters.
[14] M. Ishida,et al. Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection , 2005 .
[15] D. Bimberg,et al. Optical Properties of Self-Organized Quantum Dots: Modeling and Experiments , 2000 .
[16] Andrea Fiore,et al. Simultaneous two-state lasing in quantum-dot lasers , 2003 .
[17] Andreas Stintz,et al. Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .
[18] K. Nishi,et al. Low chirp observed in directly modulated quantum dot lasers , 2000, IEEE Photonics Technology Letters.
[19] Mikhail V. Maximov,et al. High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers , 2005 .
[20] Philippe Caroff,et al. Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection , 2005 .
[21] Ivo Montrosset,et al. Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers , 2006 .