Analysis of the Double Laser Emission Occurring in 1.55-$\mu{\hbox {m}}$ InAs–InP (113)B Quantum-Dot Lasers

In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs-InP (113)B quantum-dot (QD) lasers emitting at 1.55 mum. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP substrates. Numerical results are compared to experimental ones by using either a cascade or a direct relaxation channel model. The comparison demonstrates that when a direct relaxation channel is taken into account, the numerical results match very well the experimental ones and lead to a qualitative understanding of InAs-InP (113)B QD lasers. Numerical calculations for the turn-on delay are also presented. A relaxation oscillation frequency as high as 10 GHz is predicted which is very promising for the realization of directly modulated QD lasers for high-speed transmissions.

[1]  T. W. Berg,et al.  Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices , 2001, IEEE Photonics Technology Letters.

[2]  D. Bimberg,et al.  High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers , 2004, IEEE Photonics Technology Letters.

[3]  O. Dehaese,et al.  Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission , 2002 .

[4]  Y. Tanguy,et al.  Electron-hole asymmetry and two-state lasing in quantum dot lasers , 2005, EQEC '05. European Quantum Electronics Conference, 2005..

[5]  Philippe Caroff,et al.  High-gain and low-threshold InAs quantum-dot lasers on InP , 2005 .

[6]  Albrecht,et al.  Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots. , 1996, Physical review. B, Condensed matter.

[7]  Andrea Fiore,et al.  Impact of intraband relaxation on the performance of a quantum-dot laser , 2003 .

[8]  Hiroshi Ishikawa,et al.  Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1–1.3 μm semiconductor lasers , 2000 .

[9]  O. Dehaese,et al.  Time-resolved pump probe of 1.55 μm InAs/InP quantum dots under high resonant excitation , 2006 .

[10]  Hiroshi Ishikawa,et al.  Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1-x As/GaAs quantum dot lasers , 2000 .

[11]  Guillaume Huyet,et al.  Feedback sensitivity of 1.3 µm InAs/GaAs quantum dot lasers , 2003 .

[12]  A. Ramdane,et al.  Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers , 2006 .

[13]  N. Yokoyama,et al.  1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA , 1999, IEEE Photonics Technology Letters.

[14]  M. Ishida,et al.  Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection , 2005 .

[15]  D. Bimberg,et al.  Optical Properties of Self-Organized Quantum Dots: Modeling and Experiments , 2000 .

[16]  Andrea Fiore,et al.  Simultaneous two-state lasing in quantum-dot lasers , 2003 .

[17]  Andreas Stintz,et al.  Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .

[18]  K. Nishi,et al.  Low chirp observed in directly modulated quantum dot lasers , 2000, IEEE Photonics Technology Letters.

[19]  Mikhail V. Maximov,et al.  High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers , 2005 .

[20]  Philippe Caroff,et al.  Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection , 2005 .

[21]  Ivo Montrosset,et al.  Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers , 2006 .