论文信息 - A flexible built-in gettering layer prepared by hydrophobic Si wafer bonding - 字舞流文

A flexible built-in gettering layer prepared by hydrophobic Si wafer bonding

M. Reiche | U. Gösele | Q. Tong | H. Zimmermann | S. Hsia

[1] Manfred Reiche,et al. Hydrophobic silicon wafer bonding , 1994 .

[2] H. Wallinga,et al. Improved device performance by multistep or carbon co-implants , 1994 .

[3] M. Inuishi,et al. Proximity Gettering of Heavy Metals by High-Energy Ion Implantation , 1992 .

[4] H. Ryssel,et al. Gold and platinum diffusion: The key to the understanding of intrinsic point defect behavior in silicon , 1992 .

[5] S. Bengtsson,et al. Interface Charge Control Of Directly Bonded Silicon Structures , 1989 .

[6] D. Krol,et al. Retention of Fluorine in Silica Gels and Glass , 1989 .

[7] N. Cheung,et al. Proximity gettering with mega-electron-volt carbon and oxygen implantations , 1988 .

[8] S. Wong,et al. Oxygen implantation for internal gettering and reducing carrier lifetime , 1987 .

[9] T. Kamins,et al. Heavy metal gettering in silicon‐on‐insulator structures formed by oxygen implantation into silicon , 1985 .