Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential
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We applied an effective potential method to drift-diffusion-based simulation of carrier transport across heterojunctions. Simulations revealed that the effective potential method can explain the experimental results of current-voltage characteristics for a GaAs/AlxGa1-xAs heterostructure barrier varactor and the resistances of non-alloyed ohmic contacts in high electron mobility transistors (HEMTs).
[1] A. Kriman,et al. Effective potential for moment-method simulation of quantum devices , 1989 .