Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential

We applied an effective potential method to drift-diffusion-based simulation of carrier transport across heterojunctions. Simulations revealed that the effective potential method can explain the experimental results of current-voltage characteristics for a GaAs/AlxGa1-xAs heterostructure barrier varactor and the resistances of non-alloyed ohmic contacts in high electron mobility transistors (HEMTs).