论文信息 - Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

We proposed a new method for characterization of oxide traps leading to Random Telegraph Noise (RTN) in high-k and metal gate MOSFETs considering their energy band structure. Through this method and drain and gate current RTN measurement, we extracted positions, energy levels and activation energies of oxide traps in high-k dielectric as well as in interfacial layer.

[1] L.W. Cheng,et al. The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach , 2008, 2008 IEEE International Electron Devices Meeting.

[2] W. B. Knowlton,et al. Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper) , 2006, IEEE Transactions on Device and Materials Reliability.

[3] Hyungcheol Shin,et al. Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-Level Random Telegraph Signal Noise , 2008 .

[4] M. Saitoh,et al. Id fluctuations by stochastic single-hole trappings in high-κ dielectric p-MOSFETs , 2008, 2008 Symposium on VLSI Technology.