Interface transport properties and resistance switching in perovskite-oxide heterojunctions

Electric field induced resistance switching has been investigated for perovskite-oxide heterojunctions consisting of various metal electrodes and p-type or n-type semiconducting perovskite oxides such as Pr0.7Ca0.3MnO3 or Nb-doped SrTiO3, respectively. The metal/perovskite-oxide heterojunction devices show either ohmic or rectifying I-V characteristics similar to those of a Schottky junction, depending on the work function of the metals. In addition, the rectifying I-V characteristics have large hysteresis. Corresponding to the hysteresis directions, the junction devices show reversible resistance switching upon voltage pulse applications. On the basis of the experimental results, we propose that the resistance switching and memory effect are originated by a charging effect in the trapping states at the Schottky-like metal/perovskite-oxide interfaces.

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