Abstract This paper analyses the design and simulation of a low voltage RF MEMS metal contact switch with its RF performance in the frequency range from 2 to 12 GHz. Low actuation voltage can be achieved by varying three parameters namely air gap, actuation area and spring constant. In this paper a serpentine structure is used to reduce the spring constant of the beam without affecting the performance of the switch. A very low pull-in voltage of about 4V very close to the analytical value is achieved by simulation using Intellisuite v8.8. The RF performance of the switch shows that the return loss in the ON state is -7.217 dB and -9.71dB in the OFF state at 12GHz. The isolation of about -67.97dB at 12 GHz and the insertion loss is -0.09 dB at 12 GHz .