Atomic Layer Deposition Process of Hf‐Based High‐k Gate Dielectric Film on Si Substrate
暂无分享,去创建一个
C. Hwang | T. Park | Hyung-Suk Jung | Moonju Cho | H. Jung
[1] Jae Hyuck Jang,et al. The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics , 2011 .
[2] Jeong Hwan Kim,et al. Monocliniclike local atomic structure in amorphous ZrO2 thin film , 2010 .
[3] C. Hwang,et al. Structural properties and electronic structure ofHfO2-ZrO2composite films , 2010 .
[4] Hyunchul Kim,et al. Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy , 2010 .
[5] Hyunchul Kim,et al. Reduced Metal Contamination in Atomic-Layer-Deposited HfO2 Films Grown on Si Using O3 Oxidant Generated Without N2 Assistance , 2010 .
[6] Jeong Hwan Kim,et al. Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping , 2010 .
[7] Jiyoung Kim,et al. Effect of Ozone Concentration on Atomic Layer Deposited HfO2 on Si , 2010 .
[8] C. Hwang,et al. Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas , 2010 .
[9] C. Hwang,et al. The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films , 2009 .
[10] C. Hwang,et al. Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants , 2009 .
[11] T. Böscke,et al. Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition , 2009 .
[12] Jeong Hwan Kim,et al. Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO2 Dielectric Films by In Situ NH3 Injection , 2009 .
[13] Jeong Hwan Kim,et al. Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2 , 2009, 2009 IEEE International Reliability Physics Symposium.
[14] N. Umezawa. Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study , 2009 .
[15] Jeong Hwan Kim,et al. Atomic layer deposition of hafnium oxide from tert-butoxytris(ethylmethylamido)hafnium and ozone: rapid growth, high density and thermal stability , 2008 .
[16] C. Hwang,et al. First-principles study on doping and phase stability of HfO2 , 2008 .
[17] C. Hwang,et al. Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates , 2008 .
[18] S. Spiga,et al. Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition , 2007 .
[19] Hiroshi Iwai,et al. Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation , 2007 .
[20] H. Kim,et al. Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics , 2007 .
[21] P. Kirsch,et al. Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors , 2007 .
[22] Jeong Hwan Kim,et al. Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability , 2007 .
[23] S. Samavedam,et al. Hafnium zirconate gate dielectric for advanced gate stack applications , 2007 .
[24] Jeong Hwan Kim,et al. Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment , 2007 .
[25] S. De Gendt,et al. Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited $\hbox{HfO}_{2}$ Layers , 2007, IEEE Transactions on Electron Devices.
[26] Chang Seo Park,et al. Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks , 2007, IEEE Transactions on Device and Materials Reliability.
[27] Hyungjun Kim,et al. Electrical property improvements of high-k gate oxide by in situ nitrogen incorporation during atomic layer deposition , 2007 .
[28] X. Gong,et al. Effect of Al addition on the microstructure and electronic structure of HfO2 film , 2007 .
[29] Sang-Won Kang,et al. Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3 , 2006 .
[30] A. Toriumi,et al. Dielectric constant enhancement due to Si incorporation into HfO2 , 2006 .
[31] K. Suzuki,et al. Quantum chemical molecular dynamics analysis of the effect of oxygen vacancies and strain on dielectric characteristic of hfo2-x films , 2006, 2006 International Conference on Simulation of Semiconductor Processes and Devices.
[32] S. Kamiyama,et al. Impact of O3 concentration on ultrathin HfO2 films deposited on HF-cleaned silicon using atomic layer deposition with Hf[N(CH3)(C2H5)]4 , 2006 .
[33] E. Sleeckx,et al. Scaling to Sub- 1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition , 2006 .
[34] Akira Toriumi,et al. Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator , 2006 .
[35] B. E. White,et al. Impact of Zr addition on properties of atomic layer deposited HfO2 , 2006 .
[36] Min-Soo Kang,et al. Plasma enhanced chemical vapor deposition of nitrogen-incorporated silicon oxide films using TMOS/N2O gas , 2006 .
[37] Jeong Hwan Kim,et al. Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors , 2006 .
[38] K. Kukli,et al. HfO2 Films Grown by ALD Using Cyclopentadienyl-Type Precursors and H2O or O3 as Oxygen Source , 2006 .
[39] J. Robertson. High dielectric constant gate oxides for metal oxide Si transistors , 2006 .
[40] M. Gutowski,et al. Electronic structure differences in ZrO2 vs HfO2. , 2005, The journal of physical chemistry. A.
[41] M. Raymond,et al. Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition , 2005 .
[42] C. Hwang,et al. Fabrication of HfO2 Thin-Film Capacitors with a Polycrystalline Si Gate Electrode and a Low Interface Trap Density , 2005 .
[43] T. Chao,et al. Effects of Metallic Contaminants on the Electrical Characteristics of Ultrathin Gate Oxides , 2005 .
[44] K. Kukli,et al. Atomic Layer Deposition and Characterization of HfO2 Films on Noble Metal Film Substrates , 2005 .
[45] C. Hwang,et al. Comparison of Properties of an Al2O3 Thin Layers Grown with Remote O2 Plasma, H2O , or O3 as Oxidants in an ALD Process for HfO2 Gate Dielectrics , 2005 .
[46] Je-Hun Lee,et al. Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates , 2005 .
[47] Kikuo Yamabe,et al. First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics , 2005 .
[48] Cheol Seong Hwang,et al. Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density , 2005 .
[49] Roy G. Gordon,et al. ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone , 2005 .
[50] A. Toriumi,et al. Evolution of leakage paths in HfO2∕SiO2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy , 2005 .
[51] D. Jeong,et al. Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor , 2004 .
[52] D. Jeong,et al. Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics , 2004 .
[53] C. Hwang,et al. Improvements in Reliability and Leakage Current Properties of HfO2 Gate Dielectric Films by In Situ O 3 Oxidation of Si Substrate , 2004 .
[54] A. Chin,et al. The copper contamination effect of Al2O3 gate dielectric on Si , 2004 .
[55] Sun Jin Yun,et al. Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition , 2004 .
[56] Cheol Seong Hwang,et al. Chemical structure of the interface in ultrathin HfO2/Si films , 2004 .
[57] C. Hwang,et al. High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant , 2003 .
[58] Evgeni P. Gusev,et al. Ultrathin HfO 2 films grown on Silicon by atomic layer deposition for advanced gate dielectrics applications , 2003 .
[59] D. Lincot,et al. Yttria-doped zirconia thin films deposited by atomic layer deposition ALD: a structural, morphological and electrical characterisation , 2003 .
[60] Ho-Kyu Kang,et al. Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant , 2003 .
[61] Jong-Ho Lee,et al. Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates , 2003 .
[62] Chih-Wei Yang,et al. Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric , 2003 .
[63] J. F. Conley,et al. Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O , 2003 .
[64] Young Hee Kim,et al. Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing , 2003 .
[65] Wilfried Vandervorst,et al. Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers , 2002 .
[66] W. D. Wang,et al. Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si , 2002 .
[67] C. Hwang,et al. Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate , 2002 .
[68] K. Kukli,et al. Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water , 2002 .
[69] Cheol Seong Hwang,et al. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate , 2002 .
[70] Raghaw Rai,et al. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2 , 2002 .
[71] D. Schroder,et al. Degradation of ultrathin oxides by iron contamination , 2001 .
[72] M. Kakihana,et al. Cubic-tetragonal phase change of yttria-doped hafnia solid solution: High-resolution X-ray diffraction and Raman scattering , 2001 .
[73] Heung-Jae Cho,et al. Characteristics of TaOxNy Gate Dielectric with Improved Thermal Stability , 2001 .
[74] Tuomo Suntola,et al. Atomic Layer Epitaxy , 1989 .
[75] Stefan De Gendt,et al. Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics , 2010 .
[76] Bich-Yen Nguyen,et al. Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics , 2003 .
[77] R. Wallace,et al. Hafnium and zirconium silicates for advanced gate dielectrics , 2000 .