论文信息 - Optical waveguiding in proton-implanted GaAs

Optical waveguiding in proton-implanted GaAs

We have produced optical waveguides in n‐type GaAs by implantation with 300‐keV protons. The guiding is shown to be due to the elimination of charge carriers from the implanted region. Annealing of the waveguide leads to very large reductions in the 1.15‐μ guided‐wave absorption.

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