1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz
暂无分享,去创建一个
M. Barsky | P.H. Liu | I. Smorchkova | R. Tsai | M. Wojtowicz | M. Truong | M.A. Khan | H. Wang | J.W. Yang | R. Sandhu | R. Dia | C. Namba | D. Ko
[1] J. Yang,et al. High-power 10-GHz operation of AlGaN HFET's on insulating SiC , 1998, IEEE Electron Device Letters.
[2] H. Morkoç,et al. Microwave performance of AlGaN/GaN inverted MODFET's , 1997, IEEE Electron Device Letters.
[3] P. Janke,et al. AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy , 2001 .