Multilayer porous structures on GaN for the fabrication of Bragg reflectors

We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy (HVPE). The formation of MPS during anodization is caused by the spatial modulation of the electrical conductivity throughout the surface and the volume of the HVPE-grown GaN substrate, which occurs according to a previously proposed model involving generation of pits and their overgrowth. We found that the topology of the porous sheets constituting the MPS is different in the vicinity of N-face and Ga-face of the bulk wafer, it being of conical shape near the N-face and of hemispherical shape near the Ga-face. The composition of electrolytes, their concentration as well as the anodization potential applied during electrochemical etching are among technological parameters optimized for designing MPS suitable for Bragg reflector applications. It is shown also that regions with various porosities can be produced in depth of the sample by changing the anodization potential during the electrochemical etching.

[1]  L. Canham.  Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers , 1990 .

[2]  Volker Lehmann,et al.  Porous silicon formation: A quantum wire effect , 1991 .

[3]  Ion Tiginyanu,et al.  Surface-related phonon mode in porous GaP , 1996 .

[4]  Leigh T. Canham,et al.  Progress towards silicon optoelectronics using porous silicon technology , 1996 .

[5]  Hans L. Hartnagel,et al.  Ion implantation as a tool for controlling the morphology of porous gallium phosphide , 1997 .

[6]  Hans L. Hartnagel,et al.  LETTER TO THE EDITOR: Porosity-induced modification of the phonon spectrum of n-GaAs , 1997 .

[7]  Ilesanmi Adesida,et al.  Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching , 1999 .

[8]  Hans L. Hartnagel,et al.  Semiconductor sieves as nonlinear optical materials , 2000 .

[9]  Veaceslav Ursaki,et al.  Temperature dependence of Raman scattering in porous gallium phosphide , 2001 .

[10]  Ion Tiginyanu,et al.  Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures , 2001 .

[11]  Ion Tiginyanu,et al.  Poly(p-phenylene vinylene)/porous GaP composite materials , 2001 .

[12]  Hans L. Hartnagel,et al.  Fröhlich modes in porous III-V semiconductors , 2001 .

[13]  Ion Tiginyanu,et al.  Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs , 2002 .

[14]  Ion Tiginyanu,et al.  Porous III-V compounds as nonlinear optical materials , 2003 .

[15]  Ion Tiginyanu,et al.  Self-organized growth of single crystals of nanopores , 2003 .

[16]  Veaceslav Ursaki,et al.  Porosity-induced gain of luminescence in CdSe , 2004 .

[17]  Ion Tiginyanu,et al.  Fabrication and photoluminescence properties of porous CdSe , 2005 .

[18]  Ion Tiginyanu,et al.  Enhanced nonlinear optical response of InP(100) membranes , 2005 .

[19]  Ion Tiginyanu,et al.  Enhanced terahertz emission from porous InP (111) membranes , 2005 .

[20]  Ion Tiginyanu,et al.  Porosity-induced blueshift of photoluminescence in CdSe , 2006 .

[21]  Ion Tiginyanu,et al.  A GaN-based two-sensor array for methane detection in an ethanol environment , 2006 .

[22]  Ion Tiginyanu,et al.  Photoluminescence and vibrational properties of nanostructured ZnSe templates , 2007 .

[23]  Ion Tiginyanu,et al.  Ordered arrays of metal nanotubes in semiconductor envelope , 2008 .

[24]  V. V. Sergentu,et al.  Quasi-Ordered Networks of Metal Nanotubes Embedded in Semiconductor Matrices for Photonic Applications , 2011 .

[25]  Qian Sun,et al.  The fabrication of large-area, free-standing GaN by a novel nanoetching process , 2011, Nanotechnology.

[26]  Yu Zhang,et al.  Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes , 2011 .

[27]  Jung Han,et al.  A liftoff process of GaN layers and devices through nanoporous transformation , 2012 .

[28]  Jung Han,et al.  Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism , 2012 .

[29]  B. Bessaïs,et al.  Progress of porous silicon APTES-functionalization by FTIR investigations , 2015 .

[30]  Hao-Chung Kuo,et al.  Mesoporous GaN for Photonic Engineering-Highly Reflective GaN Mirrors as an Example , 2015 .

[31]  V. V. Sergentu,et al.  Metallized Porous GaP Templates for Electronic and Photonic Applications , 2015 .

[32]  Rainer Adelung,et al.  Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping , 2016 .

[33]  V. V. Sergentu,et al.  Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications , 2017 .