论文信息 - -Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes- - 字舞流文

-Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes-

Larry A. Coldren | John E. Bowers | S. P. DenBaars | M. P. Mack | Amber C. Abare | Peter Kozodoy | Sarah L. Keller | L. Coldren | S. Denbaars | J. Bowers | S. Keller | P. Kozodoy | M. Mack | A. Abare | R. K. Sink

[1] Akito Kuramata,et al. InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy , 1997 .

[2] H. Amano,et al. Shortest wavelength semiconductor laser diode , 1996 .

[3] Masayuki Ishikawa,et al. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates , 1996 .