论文信息 - Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology

Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology

A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2sidewall spacers is described. The process is compatible with most conventional polysilicon-gated FET processes and needs no additional photomasking steps. Excellent control and reproducibility of the n-region of the LDD device are obtained. Measurements from dynamic clock generators have shown that LDDFET's have as much as 1.9X performance advantage over conventional devices.

W.W. Walker | D.L. Critchlow | P.J. Tsang | S. Ogura | J.F. Shepard

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