p-Type SiGe transistors with low gate leakage using SiN gate dielectric

Using high-quality jet-vapor-deposited (JVD) SiN as gate dielectric, p-type SiGe transistors are fabricated on SiGe heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD). For an 0.25-/spl mu/m gate-length device, the gate leakage current is as small as 2.4 nA/mm at V/sub ds/=-1.0 V and V/sub gn/=0.4 V. A maximum extrinsic transconductance of 167 mS/mm is measured. A unity current gain cutoff frequency of 27 GHz and a maximum oscillation frequency of 35 GHz are obtained.

[1]  M. Gluck,et al.  HIGH FMAX N-TYPE SI/SIGE MODFETS , 1997 .

[2]  B. Meyerson,et al.  SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing , 1994, IEEE Electron Device Letters.

[3]  B. Meyerson,et al.  DC and RF performance of 0.25 μm p-type SiGe MODFET , 1996, IEEE Electron Device Letters.

[4]  Steven J. Koester,et al.  High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD , 1999 .

[5]  D. Harame,et al.  High-mobility modulation-doped SiGe-channel p-MOSFETs , 1991, IEEE Electron Device Letters.

[6]  J. Mogab,et al.  Application of JVD nitride gate dielectric to a 0.35 micron CMOS process for reduction of gate leakage current and boron penetration , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[7]  J. Nocera,et al.  High-transconductance n-type Si/SiGe modulation-doped field-effect transistors , 1992, IEEE Electron Device Letters.

[8]  Junichi Murota,et al.  High-mobility strained-Si PMOSFET's , 1996 .

[9]  I. Adesida,et al.  A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET , 1996, IEEE Electron Device Letters.

[10]  High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs , 1998 .

[11]  T. P. Ma,et al.  Making Silicon Nitride Film a Viable Gate Dielectric , 1998 .

[12]  K.P. MacWilliams,et al.  Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS , 1991, IEEE Electron Device Letters.

[13]  J. Welser,et al.  Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs , 1995, Proceedings of International Electron Devices Meeting.

[14]  C. K. Maiti,et al.  Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field , 1997 .

[15]  U. Konig,et al.  Si/SiGe field-effect transistors* , 1998 .

[16]  J. Aitken,et al.  High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation , 1991, International Electron Devices Meeting 1991 [Technical Digest].