Nano-scale silicon MOSFET: towards non-traditional and quantum devices
暂无分享，去创建一个
Nano-scale silicon MOSFETs with narrow wire channels on SOI substrates are presented. The triangular wire MOSFET can suppress the short channel effect more than double-gate and single-gate SOI MOSFETs. The wire channel MOSFETs narrower than 10 nm exhibit quantum confinement effects at room temperature. New device engineering using quantum effects is also discussed.
[1] Toshiro Hiramoto,et al. Coulomb blockade oscillations at room temperature in a Si quantum wire metal‐oxide‐semiconductor field‐effect transistor fabricated by anisotropic etching on a silicon‐on‐insulator substrate , 1996 .
[2] Makoto Takamiya,et al. Fabrication of gate-all-around MOSFET by silicon anisotropic etching technique , 1998 .
[3] T. Hiramoto,et al. Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's , 2000, IEEE Electron Device Letters.