论文信息 - Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition

Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition

We report on the lasing characteristics of low-threshold long-wavelength GaInNAs double quantum well (DQW) lasers grown by metalorganic chemical vapor deposition (MOCVD). We have achieved a threshold current density of 450 A/cm2 for a 1.28-µm-emitting laser. This is the lowest value for 1.3-µm-range GaInNAs lasers grown by MOCVD. We also observed high characteristic temperatures (T0) of 210 K and 130 K for 1.25 µm and 1.28 µm lasers, respectively. In addition, we investigated the gradual change in lasing characteristics under pulsed operation. The blue shift of an emission wavelength and a threshold current reduction were observed, which is similar to that observed in the thermal annealing of GaInNAs.

[1] Kouji Nakahara,et al. Mechanism analysis of improved GaInNAs optical properties through thermal annealing , 2000 .

[2] K. Iga,et al. Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine , 1999 .

[3] Takeshi Kitatani,et al. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance , 1996 .

[4] Kenichi Iga,et al. Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs , 2000 .

[5] F. Koyama,et al. Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer , 1999 .

[6] T. Kitatani,et al. A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours , 1999 .

[7] Kenichi Iga,et al. Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition , 2000 .