Applications of the scanning electron microscope EBIC mode to semiconductor device evaluation and failure analysis

This paper shows how the Electron Beam Induced Current (EBIC) mode of operation finds routine application in the failure analysis and evaluation of semiconductor devices for space application. Most of the previously published work on EBIC has been of a theoretical nature and has concentrated on the quantitative aspect such as the measurement of minority carrier lifetime. The EBIC mode, however, also lends itself to the qualitative evaluation and analysis of comparatively complex semiconductor devices and in particular the study of diffusion spikes and similar effects. The routine application of the EBIC mode to practical device analysis is described and illustrated by case histories of device problems. Improvements in experimental techniques are proposed based on the work presented.