Structural and optical properties of InAs/(In)GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K

C. Carmesin,1,* F. Olbrich,2 T. Mehrtens,3 M. Florian,1 S. Michael,1 S. Schreier,2 C. Nawrath,2 M. Paul,2 J. Höschele,2 B. Gerken,3 J. Kettler,2 S. L. Portalupi,2 M. Jetter,2 P. Michler,2 A. Rosenauer,3,4 and F. Jahnke1,4 1Institute for Theoretical Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany 2Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany 3Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany 4MAPEX center for materials and processes, University of Bremen, 28359 Bremen, Germany

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