Sensitivity of avalanche photodetector receivers for long-wavelength optical communications

We consider, in detail, the potential improvement in receiver sensitivity that can be realized using an avalanche photodiode (APD) rather than the conventional p-i-n diode in long-wavelength optical communications systems. Numerical computations are used to determine optimum gains and receiver sensitivities for several values of ionization coefficient ratios and dark currents. Sensitivities are considered for transmission bit rates of 45 Mb/s, 90 Mb/s, and 274 Mb/s — values characteristic of present long-wavelength systems. We find that general relationships and scaling laws between receiver sensitivity and the other critical parameters can be formulated if the sensitivity is calculated in units relative to the quantum limit. An important result is that the improvement in APD sensitivity depends strongly on dark current, but only weakly on the ionization coefficient ratio. Our calculations are compared with recent results obtained for In0.53Ga0.47As/InP APDs sensitive in the λ = 0.95 μm to 1.6 μm wavelength region. We also include a brief discussion comparing APD sensitivities with those obtained using phototransistors and majority carrier devices.

[1]  S. Personick Receiver design for digital fiber optic communication systems, II , 1973 .

[2]  C. Y. Chen,et al.  Modulated barrier photodiode: A new majority‐carrier photodetector , 1981 .

[3]  K. Ogawa,et al.  Small-area high-speed InP/InGaAs phototransistor , 1981 .

[4]  S. R. Forrest,et al.  Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodes , 1981 .

[5]  Federico Capasso,et al.  Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio , 1982 .

[6]  Colin E. C. Wood,et al.  Integrated double heterostructure Ga0.47In0.53As photoreceiver with automatic gain control , 1981, IEEE Electron Device Letters.

[7]  C. A. Brackett,et al.  Atlanta fiber system experiment: Optical detector package , 1978, The Bell System Technical Journal.

[8]  David R. Smith,et al.  p-i-n/f.e.t. hybrid optical receiver for longer-wavelength optical communication systems , 1980 .

[9]  Osamu Mikami,et al.  New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region , 1980 .

[10]  S. Forrest,et al.  In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling , 1980 .

[11]  C. A. Burrus,et al.  High-speed digital lightwave communication using LEDs and PIN photodiodes at 1.3 μm , 1980, The Bell System Technical Journal.

[12]  R. Mcintyre Multiplication noise in uniform avalanche diodes , 1966 .

[13]  R. Leheny,et al.  Fast photoconductive detector using p‐In0.53Ga0.47As with response to 1.7 μm , 1981 .

[14]  D. Fritzsche,et al.  Fast response InP/InGaAsP heterojunction phototransistors , 1981 .

[15]  S. R. Forrest,et al.  A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current , 1981 .