A Small Space Radiation Monitor Capable of Measuring Multiple ISD-VGS Values of MOSFET

A small space radiation monitor capable of taking measurements of gate voltages of MOSFET for various drain currents has been developed for flight experiments aboard satellites. Measuring multiple ISDVGS values of MOSFET is expected to provide better understanding of the electronic response to ionizing radiation in space. In particular, separating the effects of oxide charge densities, interface charge densities, and temperatures is anticipated for the accurate determination of total ionizing dose. Description of the instrumentation for space-borne measurements is given, along with a summary of the anticipated results from this experiment.

[1]  Kyoung-Wook Min,et al.  Model-data comparison of total dose experiment on KITSAT-1 , 2002 .

[2]  Yugo Kimoto,et al.  Total dose orbital data by dosimeter onboard Tsubasa (MDS-1) satellite , 2003 .

[3]  K. F. Galloway,et al.  A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics , 1984, IEEE Transactions on Nuclear Science.

[4]  Martin G. Buehler,et al.  Integrated environmental monitoring system for spacecraft , 1995 .

[5]  Andrew Holmes-Siedle,et al.  The space-charge dosimeter: General principles of a new method of radiation detection , 1974 .

[6]  Robert C. Fear,et al.  The ESA Standard Radiation Environment Monitor program first results from PROBA-I and INTEGRAL , 2003 .

[7]  A. Jaksic,et al.  Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs , 2004, IEEE Transactions on Nuclear Science.

[8]  Characterisation of radiation response of 400 nm implanted gate oxide RADFETs , 2002, 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595).

[10]  M. Gussenhoven,et al.  APEXRAD: low altitude orbit dose as a function of inclination, magnetic activity and solar cycle , 1997 .

[11]  Dan Keun Sung,et al.  Analysis of anomalous TDE data on-board the KITSAT-1 , 1999 .

[12]  P. S. Winokur,et al.  Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.

[13]  E. Petersen.  Predictions and observations of SEU rates in space , 1997 .

[14]  J. Barak,et al.  Temperature effects and long term fading of implanted and un-implanted gate oxide RADFETs , 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

[15]  Daniel M. Fleetwood,et al.  A critical comparison of charge-pumping, dual-transistor, and midgap measurement techniques (MOS transistors) , 1993 .