New Results on the Design of Broadband Microwave Bipolar and FET Amplifiers

New results on the design of broadband microwave transistor amplifiers are presented. These results include analytical design and computer-aided optimization techniques for microwave bipolar and FET amplifiers with prescribed transistor gain roll-off characteristics and practical realizations of broadband input and output matching networks. Several designs of octave-band microwave bipolar and GaAs FET amplifiers are presented to illustrate the general design techniques.