Advanced compact models: gateway to modern CMOS design

Recent progress in MOS device physics, model development, and model implementation processes has qualitatively changed the capabilities of compact models precisely at a time when the rapid expansion of RF MOSFET applications is imposing the most stringent demands on the new generation of MOSFET models. This work reviews the impact of the new modeling paradigm on MOSFET circuit simulation with particular attention to RF issues, non-quasi-static effects, and symmetric surface-potential-based models. General principles are illustrated with the simulation results using the latest generation compact MOSFET model (SP).

[1]  D.B.M. Klaassen,et al.  A large signal non-quasi-static MOS model for RF circuit simulation , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[2]  William Liu,et al.  MOSFET Models for SPICE Simulation: Including BSIM3v3 and BSIM4 , 2001 .

[3]  Christian Enz,et al.  Accurate MOS modelling for analog circuit simulation using the EKV model , 1996, 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96.

[4]  P G Drennan,et al.  Unified Statistical Modeling for Circuit Simulation , 2002 .

[5]  G Gildenblat,et al.  Overview of An Advanced Surface-Potential-Based MOSFET Model (SP) , 2002 .

[6]  Gennady Gildenblat,et al.  SP: an advanced surface-potential-based compact MOSFET model , 2003, IEEE Journal of Solid-State Circuits.

[7]  G. Gildenblat,et al.  Analytical approximation for the MOSFET surface potential , 2001 .

[8]  G. Gildenblat,et al.  Quasi-static and nonquasi-static compact MOSFET models based on symmetric linearization of the bulk and inversion charges , 2003 .

[9]  Weimin Wu,et al.  Physics-based mathematical conditioning of the MOSFET surface potential equation , 2004, IEEE Transactions on Electron Devices.

[10]  G. Gildenblat,et al.  A surface potential-based compact model of n-MOSFET gate-tunneling current , 2004, IEEE Transactions on Electron Devices.

[11]  C. C. McAndrew,et al.  An improved MOSFET model for circuit simulation , 1998 .

[12]  Mansun Chan,et al.  A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation , 1998 .

[13]  Daniel P. Foty,et al.  MOSFET Modeling With SPICE: Principles and Practice , 1996 .

[14]  G. Gildenblat,et al.  SP: an advanced surface-potential-based compact MOSFET model , 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

[15]  C. Turchetti,et al.  A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs , 1986 .

[16]  G. Gildenblat,et al.  Reemergence of the surface-potential-based compact MOSFET models , 2003, IEEE International Electron Devices Meeting 2003.

[17]  D.B.M. Klaassen,et al.  Compact CMOS Modelling for Advanced Analogue and RF Applications , 2004 .

[18]  L. Lemaitre,et al.  ADMS-automatic device model synthesizer , 2002, Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285).