UHV/CVD growth of Si and S:Fe alloys : chemistry, physics, and device applications : Chemical vapor deposition

Over the period of the past five years, major advances in techniques for the low-temperature preparation of epitaxial films in the silicon/germanium materials system have led to remarkable progress in silicon-based device technology. The fundamental chemical principles underlying one of these growth methods, ultrahigh vacuum/chemical vapor deposition (UHV/CVD), are described in the overview