Conductivity control in nitrogen-doped p-Zn1-xMnxTe and magneto-transport properties

p-doped Zn 1-x Mn x Te films were grown by MBE with nitrogen plasma as a dopant source. The highest hole concentration, which attained 4.5 × 10 20 cm -3 in ZnTe, exhibited decreasing tendency with the Mn composition x, but it kept the order of 10 19 cm -3 in the range of x < 0.1. In Zn 1-x Mn x Te with p = 1.5-4.8 × 10 19 cm -3 , the temperature dependence of the resistivity exhibited insulating behavior. In the magneto-transport measurement, a large negative magnetoresistance (MR) was observed at low temperatures below 4.2 K This was attributed to the localization of holes due to the magnetic polaron formation at zero field and its release under magnetic fields.