GaN non-uniform distributed power amplifier MMICs — The highs and lows (Invited)
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[1] Charles F. Campbell,et al. Design and performance of 16–40GHz GaN distributed power amplifier MMICs utilizing an advanced 0.15µm GaN process , 2016, 2016 IEEE MTT-S International Microwave Symposium (IMS).
[2] M. Lajugie,et al. New design method of uniform and nonuniform distributed power amplifiers , 2001 .
[3] Charles F. Campbell,et al. A 1–8GHz Gallium Nitride distributed power amplifier MMIC utilizing a trifilar transformer , 2016, 2016 11th European Microwave Integrated Circuits Conference (EuMIC).
[4] Michael Schlechtweg,et al. Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology , 2014, 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).
[5] J. Sevick. Transmission Line Transformers , 1990 .
[6] D.E. Meharry,et al. Multi-Watt Wideband MMICs in GaN and GaAs , 2007, 2007 IEEE/MTT-S International Microwave Symposium.
[7] Ulrich L. Rohde,et al. Microwave Circuit Design Using Linear and Nonlinear Techniques: Vendelin/Microwave Circuit Design Using Linear and Nonlinear Techniques , 1990 .
[8] P. Chao,et al. Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology , 2011, 2011 IEEE MTT-S International Microwave Symposium.
[9] C. L. Ruthroff. Some Broad-Band Transformers , 1959, Proceedings of the IRE.
[10] P. Chao,et al. Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs , 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).