A 90nm BiCMOS technology featuring 400GHz fMAX SiGe:C HBT
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V. P. Trivedi | J. Kirchgessner | D. Morgan | D. Hammock | T. Roggenbauer | J. P. John | J. Young | T. Dao | I. To | R. Ma | S. Mehrotra | L. Radic | B. Grote | V. Trivedi | D. Hammock | L. Radic | J. John | J. Kirchgessner | D. Morgan | T. Roggenbauer | J. Young | T. Dao | I. To | R. Ma | S. Mehrotra | B. Grote
[1] S. Reynolds,et al. A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications , 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
[2] M. Racanelli,et al. A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing , 2011, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[3] Hao Li,et al. Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.
[4] J. Kirchgessner,et al. Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology , 2007, 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium.
[5] Hao Li,et al. A fully integrated 77GHz FMCW radar transmitter using a fractional-N frequency synthesizer , 2009, 2009 European Radar Conference (EuRAD).
[6] V. P. Trivedi,et al. Hyperabrupt-junction varactor for mmWave SiGe:C BiCMOS, enabling 77GHz VCO/TX with 13-15GHz tuning range , 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
[7] P. Welch,et al. A 0.18 /spl mu/m SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications , 2001, Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).
[8] Saverio Trotta,et al. SiGe technology and circuits for automotive radar applications , 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.
[9] V. P. Trivedi,et al. An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's , 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
[10] D. Celi,et al. A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
[11] Alain Chantre,et al. 0.13 $\mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications , 2009, IEEE Journal of Solid-State Circuits.