论文信息 - Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers - 字舞流文

Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

H. Morkoç | J. Jasinski | Z. Liliental-Weber | M. Reshchikov | F. Yun | Daming Huang | P. Visconti | A. Baski | T. King | C. Litton