论文信息 - Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods

Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods

Recently, complementary metal-oxide semiconductor image sensors (CISs) have become a key element of the imaging instrument and have been widely used in many scientific applications [1, 2] such as space remote sensing, medical imaging, and nuclear power plant monitoring. However, CISs used in these harsh radiation environments are susceptible to damage by particles or rays. This radiation damage includes the total ionizing dose (TID) damage, displacement dose (DD) damage, and single event transient (SET) damage. Damage by any of these would lead to image quality degradation or even functional failure. Therefore, in-deep analyses of the radiation effects on CISs are very important for the improvement of the performance of CISs under the radiation environments.

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