Discrete-Time Simulation of Current-Memory Sigma-Delta Modulators

A discrete-time approach to the simulation of current-memory ¿-¿ modulators is presented. The simulator takes into account non-idealities such as charge injection and noise in a very precise model of the current-memory cell. It has been used to evaluate the performance of a 2nd order ¿-¿ modulator designed in a 1.2 ¿m CMOS technology.