High Quality Ge Virtual Substrates on Si Wafers with Standard STI Patterning

Further improving complementary metal oxide semiconductor performance beyond the 22 nm generation likely requires the use ofhigh mobility channel materials, such as Ge for p-type metal oxide semiconductor pMOS and III/V for n-type metal oxidesemiconductor devices. The complementary integration of both materials on Si substrates can be realized with selective epitaxialgrowth. We present two fabrication schemes for Ge virtual substrates using Si wafers with standard shallow trench isolation STI .This reduces the fabrication cost of these virtual substrates as the complicated isolation scheme in blanket Ge can be omitted. Thelow topography enables integration of ultrathin high-

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