Can Single-Electron Integrated Circuits and Quantum Computers be Fabricated in Silicon?
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[1] Shunri Oda,et al. Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing , 1999 .
[2] C. Wang,et al. The initial stage of nucleation and growth of Al on H/Si(100)-1×1 by dimethylaluminum hydride vapor deposition , 1999 .
[3] M. Ancona. Design of computationally useful single-electron digital circuits , 1996 .
[4] N. Stone,et al. Logic circuit elements using single-electron tunnelling transistors , 1999 .
[5] Yasuo Takahashi,et al. Double-island single-electron devices. A useful unit device for single-electron logic LSI's , 1999 .
[6] Snider,et al. Digital logic gate using quantum-Dot cellular automata , 1999, Science.
[7] J. Snyder,et al. SUB-40 NM PTSI SCHOTTKY SOURCE/DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS , 1999 .
[8] Kazuo Nakazato,et al. A memory cell with single-electron and metal-oxide-semiconductor transistor integration , 1999 .
[9] R. Hamers,et al. An Atomically Resolved STM Study of the Interaction of Phosphine with the Silicon(001) Surface , 1994 .
[10] W. Porod,et al. Quantum-dot cellular automata: Review and recent experiments (invited) , 1999 .
[11] Tromp,et al. H coverage dependence of Si(001) homoepitaxy. , 1994, Physical review letters.
[12] J. Tucker,et al. Prospects for atomically ordered device structures based on STM lithography , 1998 .
[13] C. Wang,et al. Al nucleation on monohydride and bare Si(001) surfaces: atomic scale patterning , 1997 .
[14] B. E. Kane. A silicon-based nuclear spin quantum computer , 1998, Nature.
[15] Kazuo Yano,et al. Room-temperature single-electron memory , 1994 .
[16] Eli Yablonovitch,et al. Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures , 1999, quant-ph/9905096.
[17] J R Tucker,et al. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms , 1995, Science.
[18] J. Lyding,et al. Nanoscale oxide patterns on Si(100) surfaces , 1995 .
[19] Konstantin K. Likharev,et al. Single-electron devices and their applications , 1999, Proc. IEEE.
[20] Don Monroe,et al. Electrical characterization of an ultrahigh concentration boron delta‐doping layer , 1994 .
[21] D. Muller,et al. Geometric Frustration of 2D Dopants in Silicon: Surpassing Electrical Saturation , 1999 .
[22] John R. Tucker,et al. Complementary digital logic based on the ``Coulomb blockade'' , 1992 .