Dielectric properties of amorphous hydrogenated silicon carbide thin films grown by plasma-enhanced chemical vapor deposition
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[1] D. Yoon,et al. Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature , 2002 .
[2] S. Schulz,et al. Thin-Film Aerogel Porosity and Stiffness Characterized by Surface Acoustic Wave Spectroscopy , 2001 .
[3] A. Paskaleva,et al. Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering , 2000 .
[4] N. Pinto,et al. Electrical resistivity of a -SiC:H as a function of temperature: Evidence for discontinuities , 2000 .
[5] Melanie W. Cole,et al. Influence of postdeposition annealing on the enhanced structural and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random access memory applications , 1999 .
[6] H. Rietschel,et al. HIGH DIELECTRIC CONSTANT AND TUNABILITY OF EPITAXIAL SRTIO3 THIN FILM CAPACITORS , 1999 .
[7] L. Magafas,et al. The effect of thermal annealing on the optical properties of a-SiC:H films , 1998 .
[8] F. C. Loh,et al. Electrical and Structural Properties of Rapid Thermal Annealed Amorphous Silicon Carbide Films , 1998 .
[9] E. R. Fisher,et al. Comparison of Oxidation Rates for a ‐ Si1 − x C x : H Films Deposited from Pulsed and Continuous Wave RF Plasmas , 1998 .
[10] Weidong Si,et al. Thickness dependence of dielectric loss in SrTiO3 thin films , 1998 .
[11] M. Khakani,et al. Linear dependence of both the hardness and the elastic modulus of pulsed laser deposited a-SiC films upon their Si–C bond density , 1997 .
[12] Rainer Waser,et al. The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition , 1997 .
[13] W. K. Choi,et al. Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films , 1997 .
[14] P. Mascher,et al. Effect of annealing on the defect structure in a‐SiC:H films , 1996 .
[15] F. C. Loh,et al. Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films , 1995 .
[16] Etienne Gheeraert,et al. Electrical conduction and deep levels in polycrystalline diamond films , 1995 .
[17] N. Saito,et al. Comparative study of properties between a‐GeC:H and a‐SiC:H films prepared by radio‐frequency reactive sputtering in methane , 1995 .
[18] G. Masini,et al. Electronic properties of n+-SnO2/a-SiC:H/Au thin-film structures , 1994 .
[19] W. V. Sark,et al. Local structure and bonding states in a‐Si1−xCx:H , 1994 .
[20] M. Loboda,et al. Plasma‐enhanced chemical vapor deposition of a‐SiC:H films from organosilicon precursors , 1994 .
[21] M. Khakani,et al. Physical properties of the x‐ray membrane materials , 1993 .
[22] H. Pépin,et al. Effect of rapid thermal annealing on both the stress and the bonding states of a-SiC:H films , 1993 .
[23] Jai-Young Lee,et al. Structural and optical properties of hydrogenated amorphous silicon carbide deposited by glow discharge from C3H8‐SiH4‐H2 mixture , 1992 .
[24] H. Pépin,et al. Characterization of a‐SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x‐ray mask application , 1992 .
[25] S. S. Mitra,et al. Electrical and optical properties of aluminum-doped amorphous silicon carbide films , 1991 .
[26] R. Crandall,et al. Microvoids in amorphous Si1-xCx: H alloys studied by small-angle x-ray scattering , 1989 .
[27] I. Solomon,et al. Physics of low density-of-states a-Si1−xCx films , 1985 .
[28] Chun-Yen Chang,et al. Novel Passivation Dielectrics—The Boron‐ or Phosphorus‐Doped Hydrogenated Amorphaus Silicon Carbide Films , 1985 .
[29] S. S. Mitra,et al. Optical and Electrical Properties of Hydrogenated Amorphous Silicon Carbide , 1982 .
[30] J. J. O'Dwyer,et al. The theory of electrical conduction and breakdown in solid dielectrics , 1973 .
[31] Wolfgang J. Choyke,et al. Static Dielectric Constant of SiC , 1970 .
[32] J. R. Yeargan,et al. The Poole-Frenkel effect with compensation present. , 1968 .
[33] N. Levanon,et al. ac Electrical Breakdown in Thin Silicon Oxide Films , 1967 .
[34] N. Klein,et al. The maximum dielectric strength of thin silicon oxide films , 1966 .
[35] R. Thun,et al. Properties of Evaporated Film Capacitors , 1962 .