Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with different field plate (FP) lengths. The results indicated that applying more positive ON-state gate biases resulted in pronounced recovery in the dynamic ON-resistance for the FP device, whereas no gate-bias effects were observed for the device without FP. The mechanism responsible for the reduced current collapse by FP is proposed, in which the key role is played during ON-state by the quick field-effect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.

[1]  U. Mishra,et al.  30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[2]  H. Matsuo,et al.  Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor , 2008, IEEE Electron Device Letters.

[3]  Walter Kruppa,et al.  Trapping effects and microwave power performance in AlGaN/GaN HEMTs , 2001 .

[4]  L. Eastman,et al.  The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs , 2000, IEEE Electron Device Letters.

[5]  K. Boutros,et al.  1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance , 2011, IEEE Electron Device Letters.

[6]  Cheng Liu,et al.  High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation , 2013, IEEE Electron Device Letters.

[7]  W. Saito,et al.  Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure , 2007, IEEE Transactions on Electron Devices.

[8]  Y. Okamoto,et al.  10-W/mm AlGaN-GaN HFET with a field modulating plate , 2003, IEEE Electron Device Letters.

[9]  U. Mishra,et al.  The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs , 2001 .

[10]  Wataru Saito,et al.  Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs , 2010, IEEE Electron Device Letters.

[11]  A. Brannick,et al.  Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT , 2009, IEEE Electron Device Letters.

[12]  N. Hara,et al.  Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).