Systematic theoretical investigations of compositional inhomogeneity in InxGa1- xN thin films on GaN(0001)

[1]  T. Ito,et al.  An empirical potential approach to dislocation formation and structural stability in GaNxAs1−x , 2005 .

[2]  Nicolas Grandjean,et al.  In surface segregation in InGaN/GaN quantum wells , 2003 .

[3]  A. Béré,et al.  Atomic structure of dislocation cores in GaN , 2002 .

[4]  Y. Makarov,et al.  Surface segregation in group-III nitride MBE , 2001 .

[5]  I. Moerman,et al.  Indium segregation in InGaN quantum-well structures. , 2000 .

[6]  Hadis Morkoç,et al.  Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries , 2000 .

[7]  J. Massies,et al.  GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy , 1999 .

[8]  T. Ito,et al.  Simple Criterion for Wurtzite-Zinc-Blende Polytypism in Semiconductors , 1998 .

[9]  P. Nellist,et al.  Direct observation of the core structures of threading dislocations in GaN , 1998 .

[10]  T. Ito Theoretical Investigations of Thermodynamic Stability of III-III-N Semiconductor Alloys , 1997 .

[11]  Jean-Michel Gérard,et al.  In situ probing at the growth temperature of the surface composition of (InGa)As and (InAl)As , 1992 .

[12]  Das Sarma S,et al.  Proposed universal interatomic potential for elemental tetrahedrally bonded semiconductors. , 1988, Physical review. B, Condensed matter.

[13]  T. Ito,et al.  Theoretical Investigation of Indium Surface Segregation in InGaN Thin Films , 2005 .